Diodes DMN2004WK - Manual

DMN2004WK
Document number: DS30934 Rev. 5 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN2004WK
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
 Low On-Resistance: R
DS(ON)
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected up to 2KV

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
 Case: SOT-323
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020D
 Terminals: Finish  Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
 Terminal Connections: See Diagram
 Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2004WK-7 SOT-323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-323
TOP VIEW ESD protected up to 2kV
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
TOP VIEW
G S
D
NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
NAB
YM
Chengdu A/T Site Shanghai A/T Site