Diodes DMN2016LFG User Manual
Product summary, Features and benefits, Description and applications
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
1 of 6
January 2012
© Diodes Incorporated
DMN2016LFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= 25°C
20V
18m
Ω @ V
GS
= 4.5V
5.2A
30m
Ω @ V
GS
= 1.8V
4.0A
Features and Benefits
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected Gate
•
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
Power management functions
• Battery
Pack
• Load
Switch
Mechanical Data
• Case:
U-DFN3030-8
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Weight: 0.0172 grams (approximate)
Ordering Information
(Note 6)
Part Number
Case
Packaging
DMN2016LFG-7
U-DFN3030-8
3000 / Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our w3. For packaging details, go to our website at
Marking Information
Bottom View
Bottom View
Pin Configuration
ESD PROTECTED TO 2kV
Top View
Equivalent Circuit
Top View
S1
G1
S2
G2
D1/D2
5
6
7
8
4
3
2
1
5
6
7
8
4
3
2
1
N20 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code (01 to 53)
YYW
W
N20
U-DFN3030-8