Diodes DMN2016LFG - Manual (Page 4)

DMN2016LFG
Document number: DS32053 Rev. 3 - 2
4 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMN2016LFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.3
0.6
0.9
1.2
1.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0
5
10
15
20
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(V
)
S
T = 25°C
A
10
100
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
1,000
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
C
iss
f = 1MHz
C
oss
C
rss
0 5 10 15 20 25 30 35 40
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
V = 10V
I = A
DS
D
6
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 11 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t),
T
R
ANSI
E
N
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
R = r * R θJA(t) (t) θ
θ
JA
JA
R = 160 C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse