Diodes DMN2019UTS - Manual (Page 2)

DMN2019UTS
Document number: DS35556 Rev. 2 - 2
2 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMN2019UTS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.78 W
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
161 °C/W
Thermal Resistance, Junction to Case (Note 5) R
θJC
26 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
- - 1.0 µA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 10 µA V
GS
= ±10V, V
DS
= 0V
Gate-Source Breakdown Voltage BV
SGS
±12 - - V V
DS
= 0V, I
G
= ±250 μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.35 - 0.95 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
-
-
-
-
-
-
-
15.5 18.5
mΩ
V
GS
= 10V, I
D
= 7A
16.5 21 V
GS
= 4.5V, I
D
= 7A
17 21.5 V
GS
= 4.0V, I
D
= 7A
17.5 22.5 V
GS
= 3.6V, I
D
= 6.5A
18 23 V
GS
= 3.1V, I
D
= 6.5A
19 24 V
GS
= 2.5V, I
D
= 5.5A
24 31 V
GS
= 1.8V, I
D
= 3.5A
Forward Transfer Admittance |Y
fs
| - 13 - S V
DS
= 5V, I
D
= 5A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 143 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 74 - pF
Reverse Transfer Capacitance C
rss
- 29 - pF
Gate Resistance R
g
- 202 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 8.8 - nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6.5A
Gate-Source Charge Q
gs
- 1.4 - nC
Gate-Drain Charge Q
gd
- 3.0 - nC
Turn-On Delay Time t
D(on)
- 53 - ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10Ω, R
G
= 6Ω
Turn-On Rise Time t
r
- 78 - ns
Turn-Off Delay Time t
D(off)
- 562 - ns
Turn-Off Fall Time t
f
- 234 - ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25 °C
T
A
= +70 °C
I
D
5.4
4.3
A
Continuous Drain Current (Note 5) V
GS
= 2.5V
Steady
State
T
A
= +25 °C
T
A
= +70 °C
I
D
4.6
3.7
A
Continuous Body Diode Forward Current (Note 5)
Steady
Stat
T
A
= +25 °C I
S
0.9 A
Pulsed Drain Current (Note 5) 10μs pulse, duty cycle = 1% I
DM
30 A