Diodes DMN2019UTS - Manual (Page 4)

DMN2019UTS
Document number: DS35556 Rev. 2 - 2
4 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMN2019UTS
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE THR
ESHO
L
D VOL
TAG
E
(
V
)
GS(
T
H
)
I = 1mA
D
I = 250µA
D
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0 4 8 12 16 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
0.01
0.1
1
10
100
0.1 1 10 100
R
Limited
DS(on)
Fig. 10 Safe Operation Area
- DS
V , DRAIN-SOURCE VOLTAGE (V)
-I
, DRAIN
CURRENT
(
A
)
D
T = 150°C
T = 25°C
Single Pulse
J(m ax)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 157°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
0.001
0.01
0.1
1
r(
t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5