Maximum ratings, Thermal characteristics, Electrical characteristics n-channel – q1 – Diodes DMN2020UFCL User Manual

Page 2

Advertising
background image

DMN2020UFCL

Document number: DS36541 Rev. 3 – 2

2 of 6

www.diodes.com

December 2013

© Diodes Incorporated

DMN2020UFCL

ADVAN

CE I

N

F

O

RM

ATI

O

N


Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±10 V

Continuous Drain Current (Note 6) V

GS

= 4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

9

7.1

A

Pulsed Drain Current (Note 7)

I

DM

45 A




Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

0.61 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

205 °C/W

Power Dissipation (Note 6)

P

D

2.0 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 6)

R

θJA

62 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics N-CHANNEL – Q1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

20 — — V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

— — 1.0 μA

V

DS

= 16V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— — 10 μA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

0.4 — 0.9 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

10

12
14

14
20
26

mΩ

V

GS

= 4.5V, I

D

= 9A

V

GS

= 2.5V, I

D

= 7.5A

V

GS

= 1.8V, I

D

= 7A

Diode Forward Voltage

V

SD

— 0.7 1.2 V

V

GS

= 0V, I

S

= 1.6A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

1788 — pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

162 — pF

Reverse Transfer Capacitance

C

rss

150 —

pF

Gate Resistance

R

g

1.36

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

21.5 —

nC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 3A

Gate-Source Charge

Q

gs

2.2

nC

Gate-Drain Charge

Q

gd

2.3 —

nC

Turn-On Delay Time

t

D(on)

3.8

ns

V

DD

= 10V, V

GS

= 4.5V, I

D

= 4A

R

G

= 2Ω

Turn-On Rise Time

t

r

5.7 —

ns

Turn-Off Delay Time

t

D(off)

33

ns

Turn-Off Fall Time

t

f

6.8 —

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



Advertising