Diodes DMN2020UFCL - Manual (Page 4)

DMN2020UFCL
Document number: DS36541 Rev. 3 – 2
4 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMN2020UFCL
ADVAN
CE I
N
F
O
RM
ATI
O
N
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
0.2
0.4
0.6
0.8
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T (
A
)
S
0
5
10
15
20
25
30
0 0.3 0.6 0.9 1.2 1.5
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF)
T
10
100
1000
10000
0 2 4 6 8 10 12 14 16 18 20
C
iss
f = 1MHz
C
oss
C
rss
Q (nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45 50
V = 10V
I = A
DS
D
3
V , DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.01 0.1 1 10 100