Diodes DMN2100UDM - Manual (Page 2)

DMN2100UDM
Document number: DS31186 Rev. 5 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN2100UDM
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
4.0
3.1
A
t<10s
T
A
= 25°C
T A = 70°C
I
D
4.5
3.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
13 A
Maximum Body Diode Continuous Current I
S
1.5 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
1
W
T A = 70°C 0.6
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
127
°C/W
t<10s 91
Total Power Dissipation (Note 6)
T
A
= 25°C
P
D
1.5
W
T
A
= 70°C 0.9
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
85
°C/W t<10s 63
Thermal Resistance, Junction to Case (Note 6) R θJC 3.1
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
20 ⎯ ⎯ V V GS = 0V, I D = 250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±1 μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6 ⎯ 1.0 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 32 55
m
Ω
V
GS
= 4.5V, I
D
= 6A
⎯ 43 70 V
GS
= 2.5V, I
D
= 4.0A
⎯ 56 90 V
GS
= 1.8V, I
D
= 1.5A
⎯ 80 130 V
GS
= 1.5V, I
D
= 1.0A
Forward Transfer Admittance |Y
fs
| ⎯ 8 ⎯ S V
DS
=10V, I
D
= 6A
Diode Forward Voltage V SD
⎯ 0.7 1.1 V V
GS = 0V, I S = 2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 555 ⎯ pF
V DS = 10V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 112 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 84 ⎯ pF
Total Gate Charge Q
g
⎯ 8.8 ⎯
nC
V DS = 10V, V GS = 4.5V,
I
D
= 6.5A
Gate-Source Charge Q
gs
⎯ 1.4 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 3 ⎯ nC
Turn-On Delay Time t
D(on)
⎯ 53 ⎯
ns
V
DS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, R
G
= 6 Ω
Turn-On Rise Time t r
⎯ 78 ⎯ ns
Turn-Off Delay Time t
D(off)
⎯ 561 ⎯ ns
Turn-Off Fall Time t
f
⎯ 234 ⎯
ns
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing