Diodes DMN2250UFB - Manual (Page 2)

DMN2250UFB
Document number: DS36035 Rev. 3 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMN2250UFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
1.35
1.03
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
6 A
Maximum Body Diode continuous Current I
S
1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.5
W
T
A
= +70°C 0.3
Thermal Resistance, Junction to Ambient (Note 5) Steady state R
θJA
278 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 100 nA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1 µA V
GS
= ±6V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.35 — 1.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
—
— 170
mΩ
V
GS
= 4.5V, I
D
= 1A
— 230 V
GS
= 2.5V, I
D
= 1A
— 250 V
GS
= 1.8V, I
D
= 1A
Forward Transfer Admittance |Y
fs
| — 1.4 — S V
DS
= 10V, I
D
= 1A
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 94 — pF
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 12 — pF
Reverse Transfer Capacitance C
rss
— 10 — pF
Gate resistance R
g
— 87.1 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 1.4 — nC
V
DS
= 10V, I
D
= 250mA
Total Gate Charge (V
GS
= 10V) Q
g
— 3.1 — nC
Gate-Source Charge Q
gs
— 0.13 — nC
Gate-Drain Charge Q
gd
— 0.14 — nC
Turn-On Delay Time t
D(on)
— 4.3 — ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
Turn-On Rise Time t
r
— 6.1 — ns
Turn-Off Delay Time t
D(off)
— 59.4 — ns
Turn-Off Fall Time t
f
— 25.4 — ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.