Dmn2250ufb – Diodes DMN2250UFB User Manual
Page 4
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
4 of 6
February 2013
© Diodes Incorporated
DMN2250UFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0.05
0.15
0.25
0
0.10
0.20
0.30
-50 -25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
V
= 4.5V
I = 500mA
GS
D
V
=
V
I = 500mA
GS
D
2.5
V
=
V
I = 200mA
GS
D
1.8
0.2
0.4
0.6
0.8
1.0
0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
0
0.3
0.6
0.9
1.2
0
1.0
2.0
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
10
12 14
16 18 20
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
100
1
10
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
10
V
= 10V
I =
A
DS
D
250m