Diodes DMN2400UFB - Manual

DMN2400UFB
Document number: DS31963 Rev. 3 - 2
1 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMN2400UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
20V
0.55 Ω @ V
GS
= 4.5V 0.75A
0.75 Ω @ V
GS
= 2.5V 0.63A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Battery
Charging
•
Power Management Functions
• DC-DC Converters
• Portable
Power Adaptors
Features and Benefits
• Low
On-Resistance
• Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
• Ultra-Small Surface Mount Package
•
ESD Protected up to 1.5kV
•
Lead-Free Finish; RoHS compliant (Note 1)
•
Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
X1-DFN1006-3
•
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections Indicator: Collector Dot
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information
(Note 3)
Part Number Case Packaging
DMN2400UFB-7 X1-DFN1006-3 3,000/Tape & Reel
DMN2400UFB-7B X1-DFN1006-3 10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
X1-DFN1006-3
Top View
Package Pin Configuration
Bottom View
D
S
G
ESD PROTECTED TO 1.5kV
NB = Product Type Marking Code
Dot Denotes Drain Side NB
Source
Gate
Protection
Diode
Gate
Drain
Equivalent Circuit