Diodes DMN2400UFB - Manual (Page 2)

DMN2400UFB
Document number: DS31963 Rev. 3 - 2
2 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMN2400UFB
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V GSS
±12 V
Continuous Drain Current (Note 4) V
GS
= 4.5V
Steady
State
T
A
= 25
°C
T
A
= 85
°C
I
D
0.75
0.55
A
Continuous Drain Current (Note 4) V
GS
= 2.5V
Steady
State
T
A
= 25 °C
T A = 85
°C
I
D
0.63
0.45
A
Pulsed Drain Current (Note 5) I
DM
3 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P D
0.47 mW
Thermal Resistance, Junction to Ambient R θJA 258 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 100 nA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I GSS
- - ±1.0 μA
V GS = ±4.5V, V DS = 0V
Gate-Source Leakage I
GSS
- - ±50 μA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.5 - 0.9 V V DS = V GS , I D = 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- - 0.55
Ω
V
GS
= 4.5V, I
D
= 600mA
- - 0.75 V
GS
= 2.5V, I
D
= 500mA
- - 0.9 V GS = 1.8V, I D = 350mA
Forward Transfer Admittance |Y
fs
| - 1.0 - S V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage (Note 6) V
SD
0.7 1.2 V V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 36.0 - pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 5.7 - pF
Reverse Transfer Capacitance C rss
- 4.2 - pF
Total Gate Charge Q
g
- 0.5 - nC
V
GS
=4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
- 0.07 - nC
Gate-Drain Charge Q gd
- 0.1 - nC
Turn-On Delay Time t
D(on)
- 4.11 - ns
V DD = 10V, V GS = 4.5V,
R
L
= 47 Ω, R
G
= 10 Ω,
I
D
= 200mA
Turn-On Rise Time t
r
- 3.82 - ns
Turn-Off Delay Time t
D(off)
- 14.8 - ns
Turn-Off Fall Time t
f
- 9.6 - ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.