Diodes DMN2400UFB4 User Manual
Features, Mechanical data, Ordering information
DMN2400UFB4
Document number: DS32025 Rev. 5 - 2
1 of 6
February 2011
© Diodes Incorporated
DMN2400UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
UItra-Small Surface Mount Package
•
Ultra-Low Package Profile, 0.4mm Maximum Package Height
•
Lead Free By Design/RoHS Compliant (Note 1)
•
ESD Protected up to 1.5kV
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
DFN1006H4-3
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
• Terminals:
Finish
⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.001 grams (approximate)
Ordering Information
(Note 3)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN2400UFB4-7 NC
7
8
3000
DMN2400UFB4-7B NC
7
8
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our w3. For packaging details, go to our website at
Marking Information
DFN1006H4-3
TOP VIEW
Package Pin Configuration
BOTTOM VIEW
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 1.5kV
NC
NC
NC = Product Type Marking Code
DMN2400UFB4-7
DMN2400UFB4-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Dot Denotes
Drain Side
D
S
G