Diodes DMN2400UFB4 User Manual

Page 4

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DMN2400UFB4

Document number: DS32025 Rev. 5 - 2

4 of 6

www.diodes.com

February 2011

© Diodes Incorporated

DMN2400UFB4




Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.2

0.4

0.6

0.8

1.0

1.2

V,

G

A

T

E

T

H

R

ES

H

O

LD

V

O

L

T

A

G

E (

V)

GS

(T

H

)

I = 250µA

D

I = 1mA

D

0

0.4

0.8

1.2

1.6

2.0

0

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

0.2

I,

S

O

U

R

C

E

C

U

R

R

EN

T

(A

)

S

T = 25°C

A

0

10

20

30

40

50

60

0

5

10

15

20

Fig. 9 Typical Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

IT

A

N

C

E (

p

F

)

f = 1MHz

C

iss

C

oss

C

rss

1

10

100

1,000

2

4

6

8

10

12

14

16

18

20

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

I,

D

R

AI

N-

S

O

U

R

C

E L

E

AKA

G

E

C

U

R

R

EN

T

(n

A

)

DS

S

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

2

4

6

8

10

12

Fig. 11 Typical Gate-Source Leakage Current

vs. Gate-Source Voltage

V

, GATE-SOURCE VOLTAGE (V)

GS

1

10

100

1,000

10,000

100,000

I,

G

A

T

E-

S

O

U

R

C

E L

EAKA

G

E

C

U

R

R

EN

T

(n

A

)

GS

S

T = 150°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = -55°C

A

1

10

100

1,000

10,000

100,000

2

4

6

8

10

12

Fig. 12 Typical Gate-Source Leakage Current

vs. Gate-Source Voltage

V

, GATE-SOURCE VOLTAGE (V)

GS

I,

G

A

T

E-

S

O

U

R

C

E L

EAK

A

G

E

C

U

R

R

EN

T

(n

A

)

GS

S

T = 150°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = -55°C

A

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