Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN2400UV User Manual

Page 2: Dmn2400uv

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DMN2400UV

Document number: DS31852 Rev. 7 - 2

2 of 6

www.diodes.com

January 2011

© Diodes Incorporated

DMN2400UV






Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 4)

Steady

State

T

A

= 25

°C

T

A

= 85

°C

I

D

1.33
0.84

A

Pulsed Drain Current

I

DM

3 A




Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 4)

P

D

530 mW

Thermal Resistance, Junction to Ambient

R

θJA

233.8 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

- -

100

nA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±1.0

μA

V

GS

= ±4.5V, V

DS

= 0V

- -

±50

V

GS

= ±10V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

V

GS(th)

0.5 - 0.9 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

- 0.3

0.48

Ω

V

GS

= 5.0V, I

D

= 200mA

- 0.35

0.5

V

GS

= 4.5V, I

D

= 600mA

- 0.45

0.7

V

GS

= 2.5V, I

D

= 500mA

- 0.55

0.9

V

GS

= 1.8V, I

D

= 350mA

- 0.65

1.5

V

GS

= 1.5V, I

D

= 50mA

Forward Transfer Admittance

|Y

fs

|

- 1.4 - S

V

DS

= 10V, I

D

= 400mA

Diode Forward Voltage (Note 5)

V

SD

0.7

1.2

V

V

GS

= 0V, I

S

= 150mA,

f = 1.0MHz

DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance

C

iss

- 36.0 - pF

V

DS

=16V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 5.7 - pF

Reverse Transfer Capacitance

C

rss

- 4.2 - pF

Gate Resistance

R

g

- 68 -

Ω

V

DS

= 0V, V

GS

= 0V,

Total Gate Charge

Q

g

- 0.5 - nC

V

GS

=4.5V, V

DS

= 10V,

I

D

=250mA

Gate-Source Charge

Q

gs

- 0.07 - nC

Gate-Drain Charge

Q

gd

- 0.1 - nC

Turn-On Delay Time

t

D(on)

-

4.06

- ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 47

Ω, R

G

= 10

Ω,

I

D

= 200mA

Turn-On Rise Time

t

r

-

7.28

- ns

Turn-Off Delay Time

t

D(off)

-

13.74

- ns

Turn-Off Fall Time

t

f

-

10.54

- ns

Notes:

4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm

2

x 6).

5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.






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