Dmn2400uv – Diodes DMN2400UV User Manual
Page 4
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DMN2400UV
Document number: DS31852 Rev. 7 - 2
4 of 6
January 2011
© Diodes Incorporated
DMN2400UV
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE TH
RESHO
L
D VOL
T
AG
E
(
V)
GS(
T
H
)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
0
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
10
20
30
40
50
60
0
5
10
15
20
Fig. 9 Typical Capacitance
V
, DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0.1
1
10
100
1,000
2
4
6
8
10
12
14
16
18
20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N-
S
O
U
R
C
E L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
,
GA
T
E
-S
OURCE
VOL
T
AGE (
V
)
GS
V
= 10V
I = 250mA
DS
D