Diodes DMN2500UFB4 - Manual (Page 2)

DMN2500UFB4
Document number: DS35724 Rev. 3 - 2
2 of 5
www.diodes.com
March 2012
© Diodes Incorporated
DMN2500UFB4
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V GSS
±6 V
Continuous Drain Current (Note 4) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
810
640
mA
t<10s
T
A
= 25°C
T A = 70°C
I
D
950
750
mA
Continuous Drain Current (Note 5) V GS = 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
1000
800
mA
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
1200
1000
mA
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I DM
4 A
Maximum Body Diode continuous Current I
S
850 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P
D
0.46
W
T
A
= 70°C 0.29
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
279 °C/W
t<10s 210 °C/W
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
0.95
W
T A = 70°C 0.6
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
134 °C/W
t<10s 100 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
20 - - V V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 100 nA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±1.0 μA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.5 - 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
0.3 0.4
Ω
V
GS
= 4.5V, I
D
= 600mA
0.4 0.5 V
GS
= 2.5V, I
D
= 500mA
0.5 0.7 V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance |Y
fs
| - 1.4 - S V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage V SD
0.7 1.2 V V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 60.67 - pF
V DS =16V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 9.68 - pF
Reverse Transfer Capacitance C
rss
- 5.37 - pF
Gate resistance R
g
- 93 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
- 736.6 - pC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
- 93.6 - pC
Gate-Drain Charge Q
gd
- 116.6 - pC
Turn-On Delay Time t D(on)
- 5.1 - ns
V
DD
= 10V, V
GS
= 4.5V,
R L = 47 Ω, R
G = 10 Ω,
I D = 200mA
Turn-On Rise Time t
r
- 7.4 - ns
Turn-Off Delay Time t
D(off)
- 26.7 - ns
Turn-Off Fall Time t
f
- 12.3 - ns
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.