Diodes DMN2500UFB4 - Manual (Page 4)

DMN2500UFB4
Document number: DS35724 Rev. 3 - 2
4 of 5
www.diodes.com
March 2012
© Diodes Incorporated
DMN2500UFB4
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.4
0.8
1.2
1.6
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
I = 250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0
2
4
6
8
10
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
1
10
100
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
oss
C
rss
1
10
100
1,000
0 4 8 12 16 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N-
S
O
U
R
C
E L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Package Outline Dimensions
X2-DFN1006-3
Dim Min Max Typ
A ⎯ 0.40 ⎯
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
L2
A1
E b2
L1 L3
D
e
b1
A