Diodes DMN2990UFA - Manual (Page 2)

DMN2990UFA
Document number: DS35765 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMN2990UFA
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
510
410
mA
t<10s
T
A
= +25°C
T A = +70°C
I
D
610
490
mA
Continuous Drain Current (Note 5) V GS = 1.8V
Steady
State
T
A
= +25°C
T
A
= 70°C
I
D
380
300
mA
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
450
360
mA
Pulsed Drain Current (Note 6) I DM
800 mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) Steady state P D
400 mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R JA
310 °C/W
t<10s 220 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV
DSS
20 — — V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 100
nA
V DS = 16V, V GS = 0V
— — 50 V DS = 5V, V GS = 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(th)
0.4 — 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS(ON)
— 0.60 0.99
Ω
V
GS
= 4.5V, I
D
= 100mA
— 0.75 1.2 V
GS
= 2.5V, I
D
= 50mA
— 0.90 1.8 V
GS
= 1.8V, I
D
= 20mA
— 1.2 2.4 V
GS
= 1.5V, I
D
= 10mA
— 2.0 — V GS = 1.2V, I D = 1mA
Forward Transfer Admittance |Y fs | 180 — — mS V DS = 10V, I D = 400mA
Diode Forward Voltage V
SD
- 0.6 1.0 V V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C
iss
— 27.6 55.2 pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 4.0 8.0 pF
Reverse Transfer Capacitance C
rss
— 2.8 5.6 pF
Total Gate Charge Q
g
— 0.5 — nC
V
GS
= 4.5V, V
DS
= 10V,
I D = 250mA
Gate-Source Charge Q
gs
— 0.07 — nC
Gate-Drain Charge Q gd
— 0.07 — nC
Turn-On Delay Time t
D(on)
— 4.0 — ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47 Ω, R
G
= 10 Ω,
I
D
= 200mA
Turn-On Rise Time t
r
— 3.3 — ns
Turn-Off Delay Time t
D(off)
— 19.0 — ns
Turn-Off Fall Time t
f
— 6.4 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.