Diodes DMG301NU - Manual (Page 2)

DMG301NU
Document number: DS36226 Rev. 2 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG301NU
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
25 V
Gate-Source Voltage V
GSS
8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.26
0.21
A
Continuous Drain Current (Note 6) V
GS
= 2.7V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.23
0.18
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
1.5 A
Maximum Body Diode Continuous Current (Note 6) I
S
0.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.32
W
(Note 6) 0.4
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
369
°C/W (Note 6) 296
Thermal Resistance, Junction to Case (Note 6) R
θJC
115
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
25   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1.0 µA V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage I
GSS
  100 nA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.7  1.1 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
  4 Ω V
GS
= 4.5V, I
D
= 0.4A
  5 Ω  V
GS
= 2.7V, I
D
= 0.2A
Forward Transconductance g
FS
 1  S V
DS
= 5V, I
D
= 0.4A
Diode Forward Voltage V
SD
 0.76  1.2  V V
GS
= 0V, I
S
= 0.29A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 27.9 
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
 6.1 
Reverse Transfer Capacitance C
rss
 2.0 
Gate Resistance R
G
 26.4  Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
 0.36 
nC
V
GS
= 4.5V, V
DS
= 5V,
I
D
= 0.2A
Gate-Source Charge Q
gs
 0.06 
Gate-Drain Charge Q
gd
 0.04 
Turn-On Delay Time t
D(on)
 2.9 
nS
V
GS
= 4.5V, V
DS
= 6V
I
D
= 0.5A, R
G
= 50Ω
Turn-On Rise Time t
r
 1.8 
Turn-Off Delay Time t
D(off)
 6.6 
Turn-Off Fall Time t
f
 2.3 
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.