Diodes DMG301NU - Manual (Page 4)

DMG301NU
Document number: DS36226 Rev. 2 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG301NU
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
0.2
0.4
0.6
0.8
T = 25°C
A
1
0 0.3 0.6 0.9 1.2 1.5
Q (nC)
g
, TOTAL GATE CHARGE
Figure 9 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V = 15V
I = A
DS
D
200m
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
TI
O
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
1
10
100
0 5 10 15 20 25
C
iss
f = 1MHz
C
rss
C
oss
0.001
0.01
0.1
1
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board