Dmg4496sss new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG4496SSS User Manual

Page 2: Electrical characteristics, Dmg4496sss

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DMG4496SSS

Document number: DS32048 Rev. 5 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DMG4496SSS

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±25 V

Continuous Drain Current (Note 6)

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

10

6

A

Pulsed Drain Current (Note 7)

I

DM

60 A

Avalanche Current (Notes 7 & 8)

I

AR

8 A

Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH

E

AR

3.2 mJ




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 6)

P

D

1.42 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 6)

R

θJA

88.49 °C/W

Operating and Storage Temperature Range

T

J

,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage

BV

DSS

30

— V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

— — 1

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±25V, V

DS

= 0V

ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage

V

GS(th)

0.8 1.2 2.0 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS(ON)

16
22

21.5

29

mΩ

V

GS

= 10V, I

D

= 10A

V

GS

= 4.5V, I

D

= 7.5A

Forward Transfer Admittance

|Y

fs

|

11.7 — S

V

DS

= 5V, I

D

= 10A

Diode Forward Voltage

V

SD

0.70 1 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance

C

iss

493.5

pF

V

DS

=15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

94.5

pF

Reverse Transfer Capacitance

C

rss

50.4

pF

Gate Resistance

R

g

2.86

V

DS

=0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

4.7

nC

V

DS

= 15V, V

GS

= 4.5V, ID =10A

Total Gate Charge (V

GS

= 10V)

Q

g

10.2

V

DS

= 15V, V

GS

= 10V, ID =10A

Gate-Source Charge

Q

gs

1.4

nC

Gate-Drain Charge

Q

gd

1.7

nC

Turn-On Delay Time

t

D(on)

4.76

ns

V

GS

= 10V, V

Ds

= 15V,

R

G

= 6Ω, R

L

= 15Ω,

Turn-On Rise Time

t

r

3.64

ns

Turn-Off Delay Time

t

D(off)

19.5

ns

Turn-Off Fall Time

t

f

4.9

ns

Notes:

6. Device mounted on 1 in.

2

FR-4 board with 2oz. Copper, in a still air environment @ T

A

= +25°C. The value in any given application depends on the

user's specific board design.

7. Repetitive rating, pulse width limited by junction temperature.

8. I

AR

and E

AR

rating are based on low frequency and duty cycles to keep T

J

= 25°C

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

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