Dmg4800lfg new prod uc t, Dmg4800lfg – Diodes DMG4800LFG User Manual
Page 3
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
3 of 6
November 2009
© Diodes Incorporated
DMG4800LFG
NEW PROD
UC
T
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
5
10
15
20
25
30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AIN-
S
O
URCE ON-
R
E
S
IS
T
A
NCE (
)
DS
(O
N
)
Ω
V
= 4.5V
GS
V
= 2.5V
GS
0
0.01
0.02
0.03
0
5
10
15
20
25
30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
,
D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.8
R
, D
R
AI
N-
S
O
U
R
C
E
ON
-R
E
S
IS
T
A
N
C
E
(N
OR
MA
L
IZ
E
D
)
DS
O
N
1.6
V
= 4.5V
I = 10A
GS
D
V
= 10V
I = 11.6A
GS
D
0
0.005
0.01
0.015
0.02
0.025
0.03
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAI
N-
S
OURCE
ON-
RES
IS
T
A
NCE
(
)
DSO
N
Ω
V
= 10V
I = 11.6A
GS
D
V
= 4.5V
I = 10A
GS
D
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
T
E
THRES
H
O
L
D VO
L
T
AG
E
(V
)
GS
(T
H
)
0
0.4
0.8
1.2
1.6
I = 250µA
D
I = 1mA
D
0
4
8
12
16
20
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 8 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A