Diodes DMG4800LFG - Manual (Page 4)

DMG4800LFG
Document number: DS31785 Rev. 3 - 2
4 of 6
www.diodes.com
November 2009
© Diodes Incorporated
DMG4800LFG
NEW PROD
UC
T
0 5 10 15 20 25 30
10
100
1,000
10,000
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
iss
C
rss
C
oss
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16
Fig. 10 Total Gate Charge
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS
Q , TOTAL GATE CHARGE (nC)
G
I = 11.6A
D
I = 9A
D
0 5 10 15 20 25 30
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 12 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
P
, PE
AK T
R
A
N
SI
ENT P
O
WE
R
(W
)
(p
k
)
0
10
20
30
40
50
60
70
80
90
100
Single Pulse
R = 131°C/W
T - T = P * R (t)
θ
θ
JA
J A JA
R (t) = r(t) * θJA R θJA
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 131°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5