Diodes DMG4822SSD User Manual

Dmg4822ssd new prod uc t, Product summary, Description

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DMG4822SSD

Document number: DS35403 Rev. 2 - 2

1 of 7

www.diodes.com

February 2014

© Diodes Incorporated

DMG4822SSD

NEW PROD

UC

T


DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

max

I

D

max

T

A

= +25°C

30V 20mΩ @ V

GS

= 10V

10A

Description

This MOSFET has been designed to minimize the on-state resistance
(R

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

General Purpose Interfacing Switch

Power Management Functions

 DC-DC

Converters

 Analog

Switch

Features and Benefits

 Low

On-Resistance

Low Input Capacitance

Low Input/Output leakage

Low Gate Resistance

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case:

SO-8

Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

 Terminal

Connections

Indicator: See diagram

 Terminals:

Finish

 NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

Weight: 0.072 grams (approximate)















Ordering Information

(Note 4)

Part Number

Case

Packaging

DMG4822SSD-13

SO-8

2,500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.


Marking Information

















Internal Schematic

TOP VIEW

S1

D2

S2

D1

G2

G1

D1

D2

D1

S1

G1

N-Channel MOSFET

D2

S2

G2

N-Channel MOSFET

1

4

8

5

G4822SD

YY WW

Shanghai A/T Site

1

4

8

5

G4822SD

YY

WW

Chengdu A/T Site

= Manufacturer’s Marking
G4822SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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