Dmg4822ssd new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG4822SSD User Manual

Page 2: Electrical characteristics, Dmg4822ssd

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DMG4822SSD

Document number: DS35403 Rev. 2 - 2

2 of 7

www.diodes.com

February 2014

© Diodes Incorporated

DMG4822SSD

NEW PROD

UC

T




Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±25 V

Continuous Drain Current (Note 5) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

10

6.6

A

Pulsed Drain Current (Note 6)

I

DM

60 A

Avalanche Current (Note 7 & 8)

I

AR

1.68 A

Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8)

E

AR

12.8 mJ





Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.42 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

88.4 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C





Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

- - 1 μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±100

nA

V

GS

= ±25V, V

DS

= 0V

ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage

V

GS(th)

1 - 3 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

- 13.4 20

mΩ

V

GS

= 10V, I

D

= 8.5A

- 19.5 31

V

GS

= 4.5V, I

D

= 6A

Forward Transfer Admittance

|Y

fs

|

- 20 - mS

V

DS

= 5V, I

D

= 8.5A

Diode Forward Voltage

V

SD

- 0.4 1.0 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance

C

iss

- 478.9 - pF

V

DS

= 16V, V

GS

= 0V,

f = 1MHz

Output Capacitance

C

oss

- 96.7 - pF

Reverse Transfer Capacitance

C

rss

- 61.4 - pF

Gate resistance

R

g

1.1 Ω

V

DS

= 0V, V

GS

= 0V,f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

5 - nC

V

GS

= 10V, V

DS

= 15V,

I

D

=8.5A

Total Gate Charge (V

GS

= 10V)

Q

g

- 10.5 - nC

Gate-Source Charge

Q

gs

- 1.8 - nC

Gate-Drain Charge

Q

gd

- 1.6 - nC

Turn-On Delay Time

t

D(on)

- 2.9 - ns

V

DS

= 15V, V

GS

= 10V,

R

L

= 1.8Ω, R

G

= 3Ω,

Turn-On Rise Time

t

r

- 7.9 - ns

Turn-Off Delay Time

t

D(off)

- 14.6 - ns

Turn-Off Fall Time

t

f

- 3.1 - ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%
7. Repetitive rating, pulse width limited by junction temperature.
8. I

AR

and E

AR

rating are based on low frequency and duty cycles to keep T

j

=+25°C

9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.






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