Diodes DMN3007LSS - Manual

DMN3007LSS
Document number: DS31460 Rev. 5 - 2
1 of 5
www.diodes.com
April 2010
© Diodes Incorporated
DMN3007LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
• 7mΩ @ V
GS
= 10V
• 10mΩ @ V
GS
= 4.5V
•
Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
• Weight: 0.072g (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Drain Current (Note 1) Steady
State T
A
= 25°C
T A = 70°C
I
D
16
13
A
Pulsed Drain Current (Note 3) I
DM
64 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1) P
D
2.5 W
Thermal Resistance, Junction to Ambient R θJA 50 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with R θJA = 50°C
2. No purposefully added lead.
3. Pulse
width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SO-8
Top View Top View
Internal Schematic
S
D
D
G
D
D
S
S