Diodes DMN3007LSS - Manual (Page 2)

DMN3007LSS
Document number: DS31460 Rev. 5 - 2
2 of 5
www.diodes.com
April 2010
© Diodes Incorporated
DMN3007LSS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
30 ⎯ ⎯ V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100
nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
1.3 ⎯ 2.1 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
5
7.9
7
10
m Ω
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 13A
Forward Transconductance g fs
⎯ 16.4 ⎯ S V DS = 10V, I D = 15A
Diode Forward Voltage (Note 5) V
SD
⎯ 0.67 1.2 V V
GS
= 0V, I
S
= 2.3A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 2714 ⎯ pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 436 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 380 ⎯ pF
Gate Resistance R G
⎯ 0.7 ⎯ Ω
V DS = 0V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Q g
⎯
31.2
64.2
⎯
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 16A
V DS = 15V, V GS = 10V, I D = 16A
Gate-Source Charge Q
gs
⎯ 7.1 ⎯
V
DS
= 15V, V
GS
= 10V, I
D
= 16A
Gate-Drain Charge Q
gd
⎯ 17.1 ⎯ V
DS
= 15V, V
GS
= 10V, I
D
= 16A
Turn-On Delay Time t
d(on)
⎯ 10.3 ⎯
ns
V
DS
= 15V, V
GS
= 10V,
I D = 1A, R G = 6.0
Ω
Rise Time t
r
⎯ 14.8 ⎯
Turn-Off Delay Time t
d(off)
⎯ 85.1 ⎯
Fall Time t
f
⎯ 43.6 ⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 3.0V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
V = 2.8V
GS
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
1 2 3 4
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A