Diodes DMN3030LSS - Manual (Page 2)

DMN3030LSS
Document number: DS31261 Rev. 12 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3030LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
25 V
Drain Current (Note 5) Steady
State T
A
= +25°C
T
A
= +70°C
I
D
9.0
6.75
A
Pulsed Drain Current (Note 6) I
DM
40 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
2.5 W
Thermal Resistance, Junction to Ambient (Note 5) R
JA
50 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
  1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS

 
 100
1
nA
μA V
GS
= 20V, V
DS
= 0V
V
GS
= 25V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1  2.1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)

15.7
26.4 18
30
mΩ
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transconductance g
fs
 5.8  S V
DS
= 10V, I
D
= 9A
Diode Forward Voltage V
SD
0.5 0.7 1.2 V V
GS
= 0V, I
S
= 2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 741  pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 124  pF
Reverse Transfer Capacitance C
rss
 95  pF
Gate Resistance R
G
0.30 0.88 2.5 Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge Q
g
 7.6 12
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 9A
 16.7 25
V DS = 15V, V GS = 10V, I
D
= 9A Gate-Source Charge Q
gs
 1.9 
Gate-Drain Charge Q
gd
 5.2 
Turn-On Delay Time t
d(on)
 4.0 
ns
V
GS
= 10V, V
DS
= 15V,
R
L
= 15Ω, R
G
= 6Ω
Rise Time t
r
 4.4 
Turn-Off Delay Time t
d(off)
 23.0 
Fall Time t
f
 9.4 
Notes: 5. Device mounted on 2 oz copper pad layout with R
JA
= 50°C/W.
6. Pulse width 10μS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.