Dmn3030lss – Diodes DMN3030LSS User Manual
Page 4
DMN3030LSS
Document number: DS31261 Rev. 12 - 2
4 of 6
October 2013
© Diodes Incorporated
DMN3030LSS
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1
1.3
1.6
1.9
2.2
2.5
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
T
E
THRES
H
O
LD VO
LT
AG
E
(V
)
GS
(T
H
)
I = 250µA
D
Fig. 8 Total Capacitance
10
100
1,000
10,000
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
Fig. 9 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
10
100
0
0.1 0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9
1
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
V
= -55°C
GS
V
= 25°C
GS
V
= 85°C
GS
V
= 125°C
GS
V
= 150°C
GS
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
r(t), T
R
ANSI
E
N
T
TH
E
R
MA
L
R
E
S
IST
AN
C
E
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
T - T = P * R
(t)
Duty Cycle, D = t /t
J
A
JA
1 2
R
(t) = r(t) * R
R
= 90°C/W
JA
JA
JA
P(pk)
t
1
t
2
D = Single Pulse
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.3
D = 0.5
D = 0.7
D = 0.9