Diodes DMN3051L - Manual (Page 2)

DMN3051L
Document number: DS31347 Rev. 5 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3051L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.5
3.5
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
5.8
4.9
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
20 A
Maximum Body Diode Forward Current (Note 6) I
S
2 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.7
W
T
A
= +70°C 0.44
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
182
°C/W
t < 5s 109
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.4
W
T
A
= +70°C 0.85
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
94
°C/W t < 5s 56
Thermal Resistance, Junction to Case (Note 6) R
JC
25
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  800 nA V
DS
= 28V, V
GS
= 0V
Gate-Body Leakage I
GSS
 
80
800
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.3 1.9 2.2 V V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance R
DS(ON)

 33
54 38
64
m 
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.0A
Forward Transconductance |Y
fs
|  5  S V
DS
= 5V, I
D
= 3.1A
Source-Drain Diode Forward Voltage V
SD
 0.78 1.16 V V
GS
= 0V, I
S
= 2.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 424  pF
V
DS
= 5V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 115  pF
Reverse Transfer Capacitance C
rss
 81  pF
Gate Resistance R
g
 1.51   V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
 9.0  nC
V
GS
= 10V, V
DS
= 15V, I
D
= 5.8A Gate-Source Charge Q
gs
 1.3  nC
Gate-Drain Charge Q
gd
 1.3  nC
Turn-On Delay Time t
D(on)
 3.4  ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6Ω, R
G
= 3Ω
Turn-On Rise Time t
r
 6.2  ns
Turn-Off Delay Time t
D(off)
 13.9  ns
Turn-Off Fall Time t
f
 2.8  ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.