Diodes DMN3051L - Manual (Page 4)

DMN3051L
Document number: DS31347 Rev. 5 - 2
4 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN3051L
NEW PROD
UC
T
V
,
G
A
TE
T
H
R
E
SH
O
LD
VO
LT
AG
E
(
V
)
GS
(T
H
)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
0
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
Fig. 8 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
10
0.1 0.3 0.5 0.7 0.9 1.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
0 2 4 6 8 10
10
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 9 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 15V
I = A
DS
D
5.8
0.2
0.4
0.6
0.8
1.2
1.4
1.6
0 50 100 150 200
1.0
0
T , AMBIENT TEMPERATURE (°C)
Fig. Power Derating
A
10
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(W
)
D
Note 5
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2

R (t) = r(t) *
JA
R
R = 105°C/W


JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9