Diodes DMN313DLT - Manual (Page 4)

DMN313DLT
Document number: DS35078 Rev. 2 - 2
4 of 5
www.diodes.com
August 2011
© Diodes Incorporated
DMN313DLT
NEW PROD
UC
T
0
5
10
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 7 Typical Junction Capacitance
C
ISS
f=1MHz
C
OSS
C
RSS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
Q - (nC)
Fig. 08 Gate Charge Characteristics
G
V = 15V
I = 800mA
DS
D
V (
V
)
GS
0.001
0.01
0.1
1
r(
t)
, TRANS
IENT
THERM
A
L
RES
IST
ANCE
r(t) @ D=0.05
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t) @ D=0.9
r(t) @ D=0.7
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.1
r(t) @ D=0.02
r(t) @ D=0.01
r(t) @ D=0.005
r(t) @ D=Single Pulse
R (t)=r(t) * R θ θ JA JA
R =54°C/W
Duty Cycle, D=t1/ t2
θJA
t1, PULSE DURATION TIME (sec)
Fig. 9 Transient Thermal Resistance
Package Outline Dimensions
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensions in mm
A
M
J
L D
B C
H
K
G
N