Diodes DMN3730UFB User Manual
Dmn3730ufb, Product summary, Description and applications
DMN3730UFB
Document number: DS35018 Rev. 3 - 2
1 of 6
March 2011
© Diodes Incorporated
DMN3730UFB
A Product Line of
Diodes Incorporated
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= 25
°C
30V
460m
Ω @ V
GS
= 4.5V
0.9A
560m
Ω @ V
GS
= 2.5V
0.7A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load
switch
• Portable
applications
•
Power Management Functions
Features and Benefits
•
0.5mm ultra low profile package for thin application
• 0.6mm
2
package footprint, 10 times smaller than SOT23
• Low
V
GS(th),
can be driven directly from a battery
•
Low
R
DS(on)
•
“Lead Free”, RoHS Compliant (Note 1)
•
Halogen and Antimony Free. "Green" Device (Note 2)
•
ESD Protected Gate 2kV
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
DFN1006-3
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.001 grams (approximate)
Ordering Information
(Note 3)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN3730UFB-7 NE
7
8
3,000
DMN3730UFB-7B NE
7
8
10,000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our w
3. For packaging details, go to our website at
Marking Information
DFN1006-3
Equivalent Circuit
Top View
Internal Schematic
Bottom View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 2kV
NE = Product Type Marking Code
DMN3730UFB-7
DMN3730UFB-7B
Top View
Bar Denotes Gate
and Source Side
Top View
Dot Denotes
Drain Side
NE
NE
D
S
G