Dmn3730ufb, A product line of diodes incorporated – Diodes DMN3730UFB User Manual
Page 4
DMN3730UFB
Document number: DS35018 Rev. 3 - 2
4 of 6
March 2011
© Diodes Incorporated
DMN3730UFB
A Product Line of
Diodes Incorporated
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1
1.2
Fig. 8 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
5
10
15
20
25
30
Fig. 9 Typical Total Capacitance
V
, DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
1
10
100
1,000
10,000
0
5
10
15
20
25
30
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
0
0.5
1
1.5
2
2.5
3
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
, GA
T
E
-S
OURCE
VOL
T
AG
E (
V
)
GS
V
= 15V
I = 1A
DS
D