Dmn4468lss new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN4468LSS User Manual

Page 2: Electrical characteristics, Dmn4468lss

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DMN4468LSS

Document number: DS31773 Rev. 5 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMN4468LSS

NEW PROD

UC

T



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 5)

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

10

9

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

I

DM

50 A




Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.52 W

Thermal Resistance, Junction to Ambient (Note 5)

R

JA

82 °C/W

Thermal Resistance, Junction to Case (Note 6)

R

Jc

8.2 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

30 — — V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

— — 1.0 μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

1.05 — 1.95 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

11
15

14
20

mΩ

V

GS

= 10V, I

D

= 11.6A

V

GS

= 4.5V, I

D

= 10A

Forward Transfer Admittance

|Y

fs

|

— 8 — S

V

DS

= 5V, I

D

= 11.6A

Diode Forward Voltage

V

SD

— 0.73 0.95 V V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

— 867 — pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

— 85 — pF

Reverse Transfer Capacitance

C

rss

— 81 — pF

Gate Resistance

R

g

— 1.39 — Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

— 18.85 — nC

V

GS

= 10V, V

DS

= 15V,

I

D

=11.6A

Gate-Source Charge

Q

gs

— 2.59 — nC

Gate-Drain Charge

Q

gd

— 6.15 — nC

Turn-On Delay Time

t

D(on)

— 5.46 — ns

V

DD

= 15V, V

GS

= 10V,

R

L

= 1.3Ω, R

G

= 3Ω, I

D

= 1A

Turn-On Rise Time

t

r

— 14.53 — ns

Turn-Off Delay Time

t

D(off)

— 18.84 — ns

Turn-Off Fall Time

t

f

— 6.01 — ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.













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