Diodes DMN4468LSS - Manual (Page 4)

DMN4468LSS
Document number: DS31773 Rev. 5 - 2
4 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN4468LSS
NEW PROD
UC
T
0.4
0.8
1.2
1.6
2.0
2.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
HRES
H
OL
D V
O
LT
AGE (
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0.4 0.6 0.8 1
0
4
8
12
16
20
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
T = 25°C
A
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
1
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I
, L
EAK
A
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T = 150°C
T = 25°C
Single Pulse
J(max)
A