Dmn63d8lv new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN63D8LV User Manual

Page 2: Electrical characteristics, Dmn63d8lv

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DMN63D8LV

Document number: DS36022 Rev. 2 - 2

2 of 6

www.diodes.com

August 2012

© Diodes Incorporated

DMN63D8LV

NEW PROD

UC

T





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 5)

V

GS

=10V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

260
200

mA

Continuous Drain Current (Note 5) V

GS

=

5V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

220
160

mA

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

I

DM

800 mA



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation

(Note 5)

P

D

450 mW

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

281 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to 150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol Min Typ Max Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

30

V

V

GS

= 0V,

I

D

= 250

μA

Zero Gate Voltage Drain Current

I

DSS

1.0 µA

V

DS

= 30V,

V

GS

= 0V

Gate-Body Leakage

I

GSS

±10.0

μA V

GS

=

±20V,

V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

0.8

1.5 V

V

DS

= V

GS

,

I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

2.8

Ω

V

GS

= 10.0V,

I

D

= 250mA

3.8

V

GS

= 5.0V,

I

D

= 250mA

4.2

V

GS

= 4.5V,

I

D

= 250mA

4.5

V

GS

= 4.0V,

I

D

= 250mA

13

V

GS

= 2.5V,

I

D

= 10mA

Forward Transconductance

g

FS

80

mS V

DS

= 10V,

I

D

= 0.115A

Diode Forward Voltage

V

SD

- 0.8

1.2

V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

22.0

pF

V

DS

= 25V,

V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

3.2

Reverse Transfer Capacitance

C

rss

2.0

Gate Resistance

R

G

79.9

Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge V

GS

= 10V

Q

g

0.87

nC

V

GS

= 10V, V

DS

= 30V,

I

D

= 150mA

Total Gate Charge V

GS

= 4.5V

Q

g

0.43

Gate-Source Charge

Q

gs

0.11

Gate-Drain Charge

Q

gd

0.11

Turn-On Delay Time

t

D(on)

3.3

nS

V

DD

= 30V, I

D

= 0.115A,

V

GEN

= 10V

,

R

GEN

= 25

Ω

Turn-On Rise Time

t

r

3.2

Turn-Off Delay Time

t

D(off)

12.0

Turn-Off Fall Time

t

f

6.3

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.







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