Diodes DMN63D8LV - Manual (Page 4)

DMN63D8LV
Document number: DS36022 Rev. 2 - 2
4 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMN63D8LV
NEW PROD
UC
T
1.5
2.5
3.5
4.5
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)
Ω
1.0
2.0
3.0
4.0
5.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
V = 4.0V
I = 200mA
GS
D
V = V
I = 300mA
GS
D
5.0
0.6
0.8
1.2
1.4
1.6
1.8
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(t
h
)
1.0
2.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
I
, SOU
R
CE CURR
ENT
(
A
)
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
T = 25°C
A
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A