Diodes DMB53D0UV - Manual (Page 2)

DMB53D0UV
Document number: DS31651 Rev. 7 - 2
2 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB53D0UV
Maximum Ratings – MOSFET, Q1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
50 V
Gate-Source Voltage V
GSS
±12 V
Drain Current (Note 4) Continuous I
D
160 mA
Pulsed Drain Current (Note 4) I DM
560 mA
Maximum Ratings - NPN Transistor, Q2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current I
C
100 mA
Thermal Characteristics, Total Device
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 1) R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics - MOSFET
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
50 ⎯ ⎯ V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 10 μA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ 1.0
5.0
μA
V
GS
=
±8V, V
DS
= 0V
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.7 0.8 1.0 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 3.1 4 Ω V
GS
= 4V, I
D
= 100mA
⎯ 4 5 V GS = 2.5V, I D = 80mA
Forward Transconductance g
FS
180 ⎯ ⎯ mS
V
DS
= 10V, I
D
= 100mA,
f = 1.0KHz
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
⎯ 25 ⎯ pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
⎯ 5 ⎯ pF
Reverse Transfer Capacitance C rss
⎯ 2.1 ⎯ pF
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.