Electrical characteristics - npn transistor, Mosfet, Dmb53d0uv – Diodes DMB53D0UV User Manual
Page 3
DMB53D0UV
Document number: DS31651 Rev. 7 - 2
3 of 7
March 2012
© Diodes Incorporated
DMB53D0UV
Electrical Characteristics - NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage (Note 5)
V
(BR)CBO
50 — — V
I
C
= 10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 5)
V
(BR)CEO
45 — — V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 5)
V
(BR)EBO
6 — — V
I
E
= 1
μA, I
C
= 0
DC Current Gain (Note 5)
h
FE
200 290 450 —
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 5)
V
CE(SAT)
— —
100
300
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 5)
V
BE(SAT)
—
700
900
— mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 5)
V
BE
580
—
660
—
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Cutoff Current
(Note 5)
I
CBO
I
CBO
— —
15
5.0
nA
µA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
Collector-Emitter Cut-Off Current
(Note 5)
I
CES
— — 100 nA
V
CE
= 45V
Gain Bandwidth Product
f
T
100 — — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Output Capacitance
C
OBO
— — 4.5 pF
V
CB
= 10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
V
CE
= 5V, R
S
= 2.0k
Ω,
f = 1.0kHz, BW
= 200Hz
MOSFET
Fig. 1 Typical Output Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
= 1.0V
GS
V
= 1.5V
GS
V
= 2.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 3.0V
GS
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
V
= 10V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A