Diodes DMN4020LFDE - Manual (Page 2)

DMN4020LFDE
D atasheet number: DS35819 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN4020LFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
40 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
8.0
6.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
9.5
7.5
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.7
5.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
8.0
6.4
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
32 A
Maximum Body Diode Continuous Current I
S
2.5 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C 0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
189
°C/W
t<10s 132
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C 1.31
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
61
°C/W t<10s 43
Thermal Resistance, Junction to Case (Note 6) R
JC
9.3
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
40 - - V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - 1 A V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.4 - 2.4 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
-
15 20
mΩ
V
GS
= 10V, I
D
= 8A
20 28 V
GS
= 4.5V, I
D
= 4A
Diode Forward Voltage V
SD
- 0.7 1 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 1060 - pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 84 - pF
Reverse Transfer Capacitance C
rss
- 58 - pF
Gate Resistance R
g
- 1.6 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 8.8 - nC
V
DS
= 20V, I
D
= 8A
Total Gate Charge (V
GS
= 10V) Q
g
- 19.1 - nC
Gate-Source Charge Q
gs
- 3.0 - nC
Gate-Drain Charge Q
gd
- 2.5 - nC
Turn-On Delay Time t
D(on)
- 5.3 - ns
V
DS
= 20V, R
L
= 2.5Ω
V
GS
= 10V, R
G
= 3Ω
Turn-On Rise Time t
r
- 7.1 - ns
Turn-Off Delay Time t
D(off)
- 15.1 - ns
Turn-Off Fall Time t
f
- 4.8 - ns
Reverse Recovery Time t
rr
- 10.5 - ns
I
F
= 8A, di/dt = 100A/μs
Reverse Recovery Charge Q
rr
- 4.15 - nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing