Dmn4020lfde – Diodes DMN4020LFDE User Manual
Page 4
DMN4020LFDE
D
atasheet number: DS35819 Rev. 3 - 2
4 of 6
September 2013
© Diodes Incorporated
DMN4020LFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50
-25
0
25
50
75
100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
V
= 4.5V
I = 5A
GS
D
V
=
V
I = 8A
GS
D
10
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
I = 1mA
D
I = 250µA
D
V
, GA
T
E
T
H
RE
S
H
OL
D
VOL
TA
G
E
(V
)
GS
(t
h
)
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t
),
T
R
A
N
SI
E
N
T
T
H
E
R
M
AL
R
ESI
S
TA
N
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R
(t) = r(t) * R
R
= 177°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA