Diodes DMN4027SSD - Manual (Page 2)

DMN4027SSD
Document Number DS33040 Rev 2 - 2
2 of 8
www.diodes.com
April 2013
© Diodes Incorporated
ADVAN
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A Product Line of
Diodes Incorporated
DMN4027SSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
40 V
Gate-Source Voltage (Note 5) V
GS
20 V
Continuous Drain Current V
GS
= 10V
(Notes 7)
I
D
7.1
A T
A
= +70°C (Notes 7) 5.7
(Notes 6) 5.4
Pulsed Drain Current V
GS
= 10V (Notes 8) I
DM
28.0 A
Continuous Source Current (Body diode) (Notes 7) I
S
3.3 A
Pulsed Source Current (Body diode) (Notes 8) I SM
28.0 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 9)
P
D
1.25
10.0
W
mW/ C
(Notes 6 & 10)
1.8
14.3
(Notes 7 & 9)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 6 & 9)
R JA
100
C/W
(Notes 6 & 10) 70
(Notes 7 & 9) 58
Thermal Resistance, Junction to Lead (Notes 9 & 11) R JL 53
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 C
Notes: 5. AEC-Q101 V
GS
maximum is 16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (3), except the device is measured at t
 10 sec.
8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).