Diodes DMN4027SSD - Manual (Page 4)

DMN4027SSD
Document Number DS33040 Rev 2 - 2
4 of 8
www.diodes.com
April 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
DMN4027SSD
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
40   V I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I DSS
  0.5 µA V DS = 40V, V GS = 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
1.0  3.0 V I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12) R
DS(ON)

0.017 0.027
Ω
V GS = 10V, I D = 7A
0.031 0.047 V
GS
= 4.5V, I
D
= 6A
Forward Transconductance (Notes 12 & 13) g
fs
 22.8  S V
DS
= 15V, I
D
= 7A
Diode Forward Voltage (Note 12) V
SD
 0.86 1.1 V I
S
= 7A, V
GS
= 0V
Reverse recovery time (Note 13) t
rr
 12.1  ns
I
S
= 2.1A, di/dt = 100A/µs
Reverse recovery charge (Note 13) Q rr
 5.1  nC
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance C iss
 604  pF
V
DS
= 20V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 106  pF
Reverse Transfer Capacitance C rss
 59.6  pF
Total Gate Charge (Note 14) Q
g
 6.3  nC V
GS
= 4.5V
V DS = 20V
I
D
= 7A
Total Gate Charge Note 14) Q
g
 12.9  nC
V
GS
= 10V Gate-Source Charge Note 14) Q
gs
 2.4  nC
Gate-Drain Charge Note 14) Q
gd
 3.3  nC
Turn-On Delay Time Note 14) t D(on)
 3.1  ns
V
DD
= 20V, V
GS
= 10V
I
D
= 1A, R
G
 6.0
Turn-On Rise Time Note 14) t
r
 3.1  ns
Turn-Off Delay Time (Note 14) t
D(off)
 15.4  ns
Turn-Off Fall Time Note 14) t
f
 7.5  ns
Notes: 12. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.