Diodes DMN55D0UT - Manual (Page 2)

DMN55D0UT
Document number: DS31330 Rev. 5 - 2
2 of 5
www.diodes.com
December 2012
© Diodes Incorporated
DMN55D0UT
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
50 V
Gate-Source Voltage V
GSS
±12 V
Drain Current (Note 5) Continuous I
D
160 mA
Pulsed Drain Current (Note 5) I DM
560 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P D
200 mW
Thermal Resistance, Junction to Ambient R θJA 625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
50 ⎯ ⎯ V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ 1 μA V
DS = 50V, V GS = 0V
Gate-Body Leakage I
GSS
⎯ ⎯ 1.0
5.0
μA
V
GS
=
±8V, V
DS
= 0V
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.7 0.8 1.0 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 3.1 4 Ω V
GS
= 4V, I
D
= 100mA
⎯ 4 5 V
GS
= 2.5V, I
D
= 80mA
Forward Transconductance g
FS
180 ⎯ ⎯ mS V
DS
= 10V, I
D
= 100mA, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
⎯ 25 ⎯ pF
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
⎯ 5 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 2.1 ⎯ pF
Notes: 5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.