Dmn55d0ut new prod uc t, Dmn55d0ut – Diodes DMN55D0UT User Manual
Page 3
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
3 of 5
December 2012
© Diodes Incorporated
DMN55D0UT
NEW PROD
UC
T
Fig. 1 Typical Output Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
= 1.0V
GS
V
= 1.5V
GS
V
= 2.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 3.0V
GS
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A)
D
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
V
= 10V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN CURRENT (A)
D
R
, DR
AIN-
SOUR
C
E
ON-
RES
IST
A
NCE
(
)
DS
(O
N)
Ω
1
10
0.001
0.01
0.1
1
V
= 4.0V
GS
V
= 2.5V
GS
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E (
)
DS
(O
N)
Ω
1
10
0
0.1
0.2
0.3
0.4
0.5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 5 On-Resistance Variation with Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, DRAI
N-
T
O-
SOURCE
RE
SIST
ANCE
(
NORM
A
L
IZ
E
D)
DS
(O
N)
V
= 2.5V
I = 80mA
GS
D
V
= 4V
I = 100mA
GS
D
0.4
Fig. 6 Typical Capacitance
0
5
10
15
20
25
30
35
40
V
, DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
0
5
10
15
20
25
30
35
f = 1MHz
V
= 0V
GS
C
iss
C
oss
C
rss