Diodes DMN5L06DWK - Manual

DMN5L06DWK
Document number: DS30930 Rev. 5 - 2
1 of 6
www.diodes.com
September 2011
© Diodes Incorporated
DMN5L06DWK
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual
N-Channel MOSFET
• Low On-Resistance (1.0V max)
•
Very Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
• Low Input/Output Leakage
•
Ultra-Small Surface Mount Package
•
ESD Protected up to 2kV
•
Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
SOT363
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
•
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Weight: 0.006 grams (approximate)
Ordering Information
(Note 3)
Part Number Case Packaging
DMN5L06DWK-7 SOT363 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
Top View
Internal Schematic
DAB = Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
ESD PROTECTED TO 2kV
S
1
D
1
D
2
S
2
G
1
G
2
DAB YM
DAB YM