Diodes DMN5L06DWK - Manual (Page 2)

DMN5L06DWK
Document number: DS30930 Rev. 5 - 2
2 of 6
www.diodes.com
September 2011
© Diodes Incorporated
DMN5L06DWK
NEW PROD
UC
T
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain Source Voltage V
DSS
50 V
Gate-Source Voltage V
GSS
±20 V
Drain Current (Note 4) Continuous
Pulsed (Note 5)
I
D
305
800
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Total Power Dissipation (Note 4) P D
250 mW
Thermal Resistance, Junction to Ambient R θJA 500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
50 ⎯ ⎯ V V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current @ T
C
= 25°C I
DSS
⎯ ⎯ 60 nA V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯
1
500
50
μA
nA
nA V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.49 ⎯ 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯ ⎯
⎯
⎯
3.0
2.5
2.0
Ω
V GS = 1.8V, I D = 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current I
D(ON)
0.5 1.4 ⎯ A V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance |Y
fs
| 200 ⎯ ⎯ mS V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage V
SD
0.5 ⎯ 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
⎯ ⎯ 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ ⎯ 25 pF
Reverse Transfer Capacitance C
rss
⎯ ⎯ 5.0 pF
Notes: 4. Device mounted on FR-4 PCB.
5. Pulse width ≤10μS, Duty Cycle ≤1%.
6. Short duration pulse test used to minimize self-heating effect.