Diodes DMN601DWK - Manual (Page 2)

DMN601DWK
Document number: DS30656 Rev. 7 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMN601DWK
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
20 V
Drain Current (Note 5)
Continuous
I
D
305
800
mA
Pulsed (Note 6)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance, Junction to Ambient R
θJA
625 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60   V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  10 µA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.6 2.5 V V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance R
DS(ON)


 2.0
3.0
Ω
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance |Y
fs
| 80   ms V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
(Note 8)
V
SD
0.5  1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
  50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
  25 pF
Reverse Transfer Capacitance C
rss
  5.0 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.